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| SI4565DY New Product Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 40 FEATURES ID (A) 5.2 4.9 -4.5 -3.9 rDS(on) (W) 0.040 @ VGS = 10 V 0.045 @ VGS = 4.5 V 0.054 @ VGS = -10 V 0.072 @ VGS = -4.5 V Qg (Typ) 8 D TrenchFETr Power MOSFET D 100% Rg Tested D UIS Tested APPLICATIONS D CCFL Inverter P-Channel P Channel -40 40 9 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1 D1 S2 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET Ordering Information: SI4565DY--E3 SI4565DY-T1--E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipatioa L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C P-Channel 10 secs Steady State -40 "16 Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs Steady State 40 "12 Unit V 5.2 4.2 1.7 13 8.5 2.0 1.3 3.9 3.1 30 0.9 -4.5 -3.6 -1.7 16 13 -3.3 -2.7 A -0.9 mJ 1.1 0.7 W _C 1.1 0.7 -55 to 150 2 1.3 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73224 S-50033--Rev. A, 17-Jan-05 www.vishay.com t v 10 sec Steady State Steady State P-Channel Typ 50 85 30 Symbol RthJA RthJF Typ 52 90 32 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W C/W 1 SI4565DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Body Gate Body Leakage VGS(th) DVDS/Tj ID = 250 mA DVGS(th)/Tj IGSS VDS = 0 V, VGS = "12 V VDS = 0 V, VGS = "16 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS = -40 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currenta ID( ) D(on) VDS w 5 V, VGS = 10 V VDS p -5 V, VGS = -10 V VGS = 10 V, ID = 5.2 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = -10 V, ID = -4.5 A VGS = 4.5 V, ID = 4.9 A VGS = -4.5 V, ID = -3.9 A Forward Transconductancea Diode Forward Voltagea gf fs VSD VDS = 15 V, ID = 5.2 A VDS = -15 V, ID = -4.5 A IS = 1.7 A, VGS = 0 V IS = -1.7 A, VGS = 0 V VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.033 0.045 0.037 0.059 18 13 0.75 -0.79 1.2 -1.2 0.040 0.054 0.045 0.072 S V W 0.6 -0.8 40 -40 -3.8 3.4 "100 "100 1 -1 10 -10 A mA nA mV/_C 1.6 -2.2 V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge Ciss Coss Crss Qg Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr Qrr N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5.2 A P-Channel P Channel VDS = -20 V VGS = -4 5 V ID = -4 5 A V, -4.5 V, -4.5 N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel P Channel VDS = -20 V VGS = 0 V, f = 1 MHz V, V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A VGEN = 10 V Rg = 6 W A, V, P-Channel VDD = -15 V, RL = 15 W , ID ^ -1 A VGEN = -10 V Rg = 6 W 1 A, 10 V, IF = 1.7 A, di/dt = 100 A/ms IF = -1.7 A, di/dt = 100 A/ms IF = 1.7 A, di/dt = 100 A/ms IF = -1.7 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.9 5 700 805 76 120 45 85 8 9 1.5 2 2.4 3.6 1.9 11.5 7 8 11 12 27 74 8 38 25 27 17 17 2.9 18 11 13 17 18 40 110 13 60 40 45 26 26 ns nC ns W 12 14 nC pF Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73224 S-50033--Rev. A, 17-Jan-05 2 SI4565DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Vishay Siliconix N-CHANNEL Transfer Characteristics 12 12 8 2V 4 8 TC = 125_C 4 25_C -55_C 1.5 2.0 2.5 3.0 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.050 r DS(on) - On-Resistance ( W ) 0.045 0.040 0.035 0.030 0.025 0.020 0 4 8 12 16 20 C - Capacitance (pF) 1200 1000 800 600 400 200 0 0 5 10 Coss Crss Capacitance VGS = 4.5 V VGS = 10 V Ciss 15 20 25 30 35 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) ID = 5.2 A 5 4 3 VDS = 20 V 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 Qg - Total Gate Charge (nC) Document Number: 73224 S-50033--Rev. A, 17-Jan-05 rDS(on) - On-Resistance (Normalized) VDS = 10 V 1.6 1.4 1.2 1.0 0.8 0.6 -50 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.2 A -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI4565DY Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.20 ID = 5.2 A I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.16 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 0.12 0.08 TA = 125_C TJ = 25_C 0.04 TA = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 100 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) 80 ID = 250 mA Power (W) 60 -0.0 -0.2 40 -0.4 20 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Foot *Limited by rDS(on) 10 I D - Drain Current (A) 1 1 ms 10 ms 100 ms TC = 25_C Single Pulse 1s 10 s dc 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73224 S-50033--Rev. A, 17-Jan-05 SI4565DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Vishay Siliconix N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 90_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 P-CHANNEL Transfer Characteristics TC = -55_C 25_C 12 3V 8 12 125_C 8 4 4 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) Document Number: 73224 S-50033--Rev. A, 17-Jan-05 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) www.vishay.com 5 SI4565DY Vishay Siliconix New Product P-CHANNEL Capacitance 1240 1116 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.08 VGS = 4.5 V VGS = 10 V 0.04 992 868 744 620 496 372 0.02 248 124 0.00 0 4 8 12 16 20 0 0 Crss 5 10 15 20 25 30 35 40 Coss Ciss TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 0.06 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) ID = 4.5 A 5 4 VDS = 10 V 3 2 1 0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) VDS = 20 V rDS(on) - On-Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 -50 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.5 A -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.30 On-Resistance vs. Gate-to-Source Voltage ID = 4.5 A I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.25 0.20 0.15 0.10 0.05 0.00 TJ = 25_C TA = 125_C TA = 25_C 0 2 4 6 8 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 6 Document Number: 73224 S-50033--Rev. A, 17-Jan-05 SI4565DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 40 Vishay Siliconix P-CHANNEL Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 30 0.0 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Ambient *rDS(on) Limited IDM Limited 10 I D - Drain Current (A) 1 ID(on) Limited 0.1 TA = 25_C Single Pulse 1 ms 10 ms 100 ms 1s 10 s BVDSS Limited dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Document Number: 73224 S-50033--Rev. A, 17-Jan-05 www.vishay.com 7 SI4565DY Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73224. www.vishay.com Document Number: 73224 S-50033--Rev. A, 17-Jan-05 8 |
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